CY62157EV30LL-45BVXI CY62157EV30LL-45BVXIT 48-VFBGA Electronic Integrated Circuits
Features
■ Thin small outline package (TSOP) I package configurable as 512K × 16 or 1M × 8 static RAM (SRAM)
■ High speed: 45 ns
■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ❐ Automotive-A: –40 °C to +85 °C ❐ Automotive-E: –40 °C to +125 °C
■ Wide voltage range: 2.20 V to 3.60 V
■ Pin compatible with CY62157DV30
■ Ultra low standby power ❐ Typical standby current: 2 A ❐ Maximum standby current: 8 A (Industrial)
■ Ultra low active power ❐ Typical active current: 6 mA at f = 1 MHz
■ Easy memory expansion with CE1, CE2, and OE features
■ Automatic power down when deselected
■ Complementary Metal Oxide Semiconductor (CMOS) for optimum speed and power
■ Available in Pb-free and non Pb-free 48-ball very fine-pitch ball grid array (VFBGA), Pb-free 44-pin thin small outline package (TSOP) II and 48-pin TSOP I packages
Functional
DescriptionThe CY62157EV30 is a high performance CMOS static RAMorganized as 512K words by 16 bits. This device featuresadvanced circuit design to provide ultra low active current. Thisis ideal for providing More Battery Life™ (MoBL®) in portableapplications such as cellular telephones. The device also has anautomatic power down feature that significantly reduces powerconsumption when addresses are not toggling. Place the deviceinto standby mode when deselected (CE1 HIGH or CE2 LOW orboth BHE and BLE are HIGH). The input or output pins (I/O0through I/O15) are placed in a high impedance state when thedevice is deselected (CE1HIGH or CE2 LOW), the outputs aredisabled (OE HIGH), Byte High Enable and Byte Low Enable aredisabled (BHE, BLE HIGH), or a write operation is active (CE1LOW, CE2 HIGH and WE LOW).
To write to the device, take Chip Enable (CE1 LOW and CE2HIGH) and Write Enable (WE) inputs LOW. If Byte Low Enable(BLE) is LOW, then data from I/O pins (I/O0 through I/O7) iswritten into the location specified on the address pins (A0 throughA18). If Byte High Enable (BHE) is LOW, then data from I/O pins(I/O8 through I/O15) is written into the location specified on theaddress pins (A0 through A18).
To read from the device, take Chip Enable (CE1 LOW and CE2HIGH) and Output Enable (OE) LOW while forcing the WriteEnable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then datafrom the memory location specified by the address pins appearon I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data frommemory appears on I/O8 to I/O15.
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CY62157EV30LL-45BVXI Images
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